4 c1 b2 e2 e1 b1 c2 pin #1 c1 e1 c2 b1 e2 b2 pin #1 pnp multi-chip general purpose amplifier this device is designed for general purpose amplifier and switching applications at collector currents of 10 a to 100 ma. sourced from process 66. absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-base voltage 40 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 200 ma t j , t stg operating and storage junction temperature range -55 to +150 c ? 1998 fairchild semiconductor corporation thermal characteristics t a = 25 c unless otherwise noted ffb3906 sc70-6 mark: .2a fmb3906 supersot ? -6 mark: .2a dot denotes pin #1 mmpq3906 symbol characteristic max units ffb3906 fmb3906 mmpq3906 p d total device dissipation derate above 25 c 300 2.4 700 5.6 1,000 8.0 mw mw/ c r ja thermal resistance, junction to ambient effective 4 die each die 415 180 125 240 c/w c/w c/w note: the pinouts are symmetrical; pin 1 and pin 4 are interchangeable. units inside the carrier can be of either orientation and will not affect the functionality of the device. soic-16 mark: mmpq3906 c1 c1 c2 c2 c3 c3 c4 c4 e1 b1 e2 b2 e3 b3 e4 b4 pin #1 notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. 3) all voltages (v) and currents (a) are negative polarity for pnp transistors. ffb3906 / fmb3906 / mmpq3906
electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics on characteristics v (br)ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 5.0 v i bl base cutoff current v ce = 30 v, v be = 3.0 v 50 na i cex collector cutoff current v ce = 30 v, v be = 3.0 v 50 na h fe dc current gain * i c = 0.1 ma, v ce = 1.0 v mmpq3906 i c = 1.0 ma, v ce = 1.0 v mmpq3906 i c = 10 ma, v ce = 1.0 v mmpq3906 i c = 50 ma, v ce = 1.0 v i c = 100 ma, v ce = 1.0 v 60 40 80 60 100 75 60 30 300 v ce(sat) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.25 0.4 v v v be(sat) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.65 0.85 0.95 v v f t current gain - bandwidth product i c = 10 ma, v ce = 20 v, f = 100 mhz 200 mhz c obo output capacitance v cb = 5.0 v, i e = 0, f = 140 khz 4.5 pf c ibo input capacitance v eb = 0.5 v, i c = 0, f = 140 khz 10 pf pnp multi-chip general purpose amplifier (continued) ffb3906 / fmb3906 / mmpq3906 * pulse test: pulse width 300 s, duty cycle 2.0% note: all voltages (v) and currents (a) are negative polarity for pnp transistors. spice model pnp (is=1.41f xti=3 eg=1.11 vaf=18.7 bf=180.7 ne=1.5 ise=0 ikf=80m xtb=1.5 br=4.977 nc=2 isc=0 ikr=0 rc=2.5 cjc=9.728p mjc=.5776 vjc=.75 fc=.5 cje=8.063p mje=.3677 vje=.75 tr=33.42n tf=179.3p itf=.4 vtf=4 xtf=6 rb=10) small signal characteristics (mmpq3906 only)
4 typical characteristics common-base open circuit input and output capacitance vs reverse bias voltage 0.1 1 10 0 2 4 6 8 10 reverse bias voltage (v) capacitance (pf) c obo c ibo ty pical pulsed current gain vs collector current 0. 1 0. 2 0. 5 1 2 5 10 20 50 1 00 50 100 150 200 250 i - collector curre nt (ma) h - typical pulsed cu rrent gain c fe 125 c 25 c - 40 c v = 1 .0 v ce coll ector -em itt er sa tur ati on voltage vs coll ect or cur re nt 110100200 0 0.05 0. 1 0.15 0. 2 0.25 0. 3 i - collector current (ma) v - collector emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 bas e-emitt er saturation voltage vs collect or curre nt 110100200 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter voltage (v) c besat = 10 25 c - 40 c 125 c bas e e mi tter o n voltage vs collector current 0.1 1 10 25 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c be( on) v = 1v ce 25 c - 40 c 125 c collector-cutoff current vs ambient temperature 25 50 75 100 125 0.01 0. 1 1 10 10 0 t - a mbi e nt t emp er at ur e ( c) i - c ol le ct o r cu rr en t (n a) a cbo v = 25v cb pnp multi-chip general purpose amplifier (continued) ffb3906 / fmb3906 / mmpq3906
ffb3906 / fmb3906 / mmpq3906 power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) o d sot-6 soic-16 sc70-6 pnp multi-chip general purpose amplifier (continued) typical characteristics (continued) noise figure vs frequency 0.1 1 10 100 0 1 2 3 4 5 6 f - frequency (khz) nf - noise figure (db) i = 100 a, r = 2 00 ? c v = 5.0v ce s i = 100 a, r = 2.0 k ? c s i = 1.0 ma, r = 200 ? c s noise figure vs source resistance 0.1 1 10 100 0 2 4 6 8 10 12 r - source resistance ( ) nf - noise figure (db) k ? i = 100 a c v = 5.0v f = 1.0 khz ce i = 1.0 ma c s switching times vs collector current 1 10 100 1 10 100 500 i - collector current (ma) time (ns) i = i = t r t s b1 c b2 i c 10 t f t d turn on and turn off times vs collector current 1 10 100 1 10 100 500 i - collector current (ma) time (ns) i = i = t off b1 b2 i c 10 t on v = 0.5v be(off) t i = on t off b1 i c 10
4 typical characteristics (continued) input impedance 0.1 1 10 0.1 1 10 i - collector current (ma) h - input impedance (k ) v = 10 v ce c ie f = 1.0 khz ? current gain 0.1 1 10 10 20 50 100 200 500 1000 i - collector current (ma) h - current gain v = 10 v ce c fe f = 1.0 khz o ut put admitt ance 0.1 1 10 10 100 10 00 i - collector current (ma) h - output admittance ( mhos) v = 10 v ce c oe f = 1. 0 kh z voltage fe edba ck ratio 0.1 1 10 1 10 10 0 i - collector current (ma) h - voltage feedback ratio (x10 ) c re _ 4 ffb3906 / fmb3906 / mmpq3906 pnp multi-chip general purpose amplifier (continued)
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